Open AccessEffect of N-doping on the microstructure and properties of amorphous SiC:H diffusion barrier films
Author(s) -
刘波,
唐文进,
宋忠孝,
陈亚芍,
徐可为
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.2042
Subject(s) - materials science , amorphous solid , x ray photoelectron spectroscopy , dielectric , analytical chemistry (journal) , microstructure , plasma enhanced chemical vapor deposition , doping , chemical vapor deposition , auger electron spectroscopy , fourier transform infrared spectroscopy , diffusion barrier , composite material , chemical engineering , nanotechnology , crystallography , optoelectronics , layer (electronics) , chemistry , physics , chromatography , nuclear physics , engineering
Hydrogenated amorphous a-SiC:H and a-SiCN:H with different nitrogen-concentration dielectric barrier films are prepared using the plasma-enhanced chemical vapor deposition technique RF-PECVD. The chemical and structural nature, mechanical property, dielectric constant and copper diffusion property of these films are characterized by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy measurement, nano-indentation, Agilent 4294A precision impedance analyzer, Auger electron spectroscopy and field emission transmission electron microscopy. The results indicated that the dielectric constand of the film can be adjusted btween the values of 38 and 52 by controling the NH3/3MS ratio. With the increasing of NH3/3MS ratio, the concentration of Si-N and C-N bond structure is gradually increase and micro-structure of the film becomes more dense, which is the mechanism of the improvement in the mechanical property, thermal stability and copper diffusion property of the a-SiC:H based film produced by N-doping.