Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells | Zendy

Bing Li | Zendy; Liu Cai | Zendy; Feng Liang-Huan | Zendy; Jingquan Zhang | Zendy; Jiagui Zheng | Zendy; Yaping Cai | Zendy; Wei Cai | Zendy; Lili Wu | Zendy; Wei Li | Zendy; Lei Zhi | Zendy; Zeng Guang-Gen | Zendy; Xia Geng-pei | Zendy

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Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells

Author(s) -

Bing Li,

Liu Cai,

Feng Liang-Huan,

Jingquan Zhang,

Jiagui Zheng,

Yaping Cai,

Wei Cai,

Lili Wu,

Wei Li,

Lei Zhi,

Zeng Guang-Gen,

Xia Geng-pei

Publication year - 2009

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.58.1987

Subject(s) - cadmium telluride photovoltaics , deep level transient spectroscopy , photoluminescence , impurity , materials science , tellurium , spectroscopy , thin film , analytical chemistry (journal) , optoelectronics , silicon , nanotechnology , chemistry , physics , quantum mechanics , organic chemistry , chromatography , metallurgy

Impurities and deep levels in CdS/CdTe thin film solar cells with no back-contact layer were studied by deep level transient spectroscopy and photoluminescence. They could lower the device performance notably. Distribution of net carrier concentration was obtained. Two deep levels at Ev+0.365 eV and Ev+0.282 eV were determined with concentration of 1.67×1012 cm-3 and 3.86×1011 cm-3, respectively, and with capture cross section of 1.43×10-14 cm2 and 1.53×10-16 cm2, respectively. They are attributed to chemical impurities like Au and/or a singly charged tellurium vacancy complex, or related to O atoms introduced by the deposition of CdTe in O2 and Ar ambient.

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