Open AccessDeep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells
Author(s) -
Bing Li,
Cai Liu,
Liang Feng,
Jingquan Zhang,
Jun Zheng,
Yuanqiang Cai,
Cai Wei,
Wu Li-Li,
Wei Li,
Zhi Li,
Guanggen Zeng,
Xia Geng-pei
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1987
Subject(s) - cadmium telluride photovoltaics , deep level transient spectroscopy , photoluminescence , impurity , materials science , tellurium , spectroscopy , thin film , analytical chemistry (journal) , optoelectronics , silicon , nanotechnology , chemistry , physics , quantum mechanics , organic chemistry , chromatography , metallurgy
Impurities and deep levels in CdS/CdTe thin film solar cells with no back-contact layer were studied by deep level transient spectroscopy and photoluminescence. They could lower the device performance notably. Distribution of net carrier concentration was obtained. Two deep levels at Ev+0.365 eV and Ev+0.282 eV were determined with concentration of 1.67×1012 cm-3 and 3.86×1011 cm-3, respectively, and with capture cross section of 1.43×10-14 cm2 and 1.53×10-16 cm2, respectively. They are attributed to chemical impurities like Au and/or a singly charged tellurium vacancy complex, or related to O atoms introduced by the deposition of CdTe in O2 and Ar ambient.