Open AccessSimulation and experimental investigation of recessed-gate AlGaN/GaN HEMT
Author(s) -
Chong Wang,
Quan Si,
Jinfeng Zhang,
Yue Hao,
Qian Feng,
Junfeng Chen
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1966
Subject(s) - materials science , optoelectronics , saturation current , high electron mobility transistor , conductance , heterojunction , saturation (graph theory) , etching (microfabrication) , transistor , sapphire , layer (electronics) , optics , electrical engineering , voltage , nanotechnology , condensed matter physics , laser , physics , mathematics , combinatorics , engineering
The effect of recessed-gate depth on device characteristics was analyzed. The device characteristics with different recessed-gate depth were simulated by using SILVACO and the variation of saturation current, maximum conductance and threshold with different recessed-gate depth were obtained. With increasing recessed-gate depth, the saturation current reduces and maximum conductance increases and the threshold shifts to positive direction of X-axis. High electron mobility transistors of AlGaN/GaN heterostructure grown on sapphire substrates with different recessed-gate depth were fabricated. The simulation of different recessed-gate depth device characteristics were validated by comparing experiments with the simulation results. The discrepancies between simulation and experiment were analyzed in the aspects of etching damage and interface states.