Open AccessStudy on the effects of carrier transport and parasitic parameters on the modulation response of tunnel regenerated vertical-cavity surface-emitting lasers with double active regions
Author(s) -
Tongxi Wang,
Baolu Guan,
Guo Xia,
Shen Guang-di
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1694
Subject(s) - vertical cavity surface emitting laser , materials science , laser , optoelectronics , quantum well , active layer , photon , optics , modulation (music) , physics , acoustics , nanotechnology , layer (electronics) , thin film transistor
A rate equation model of multi-quantum wells and multi-active regions were presented. The effects of photon density and the carrier capture-escape-tunnel time on the frequency response of single active region vertical-cavity surface-emitting Laser VCSEL and tunnel-regenerated VCSEL with two active regions were simulated by the small signal analysis. The result of simulation shows that the modulate bandwidth of tunnel-regenerated VCSEL with two active regions is larger than that with single active region under the same drive current, then its causes are discussed. Moreover, we simulate the frequency response of the parasitic circuit of tunnel-regenerated internal-contact oxide-confined VCSEL with two active regions after analyzing its parasitic parameters.