Open AccessAn optical emission spectroscopy study on the high rate growth of microcrystalline silicon films
Author(s) -
Han Xiao-Yan,
Xin Geng,
Guofu Hou,
Xiaodan Zhang,
Guijun Li,
Yujie Yuan,
Changchun Wei,
Jian Sun,
Dekun Zhang,
Ying Zhao
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1344
Subject(s) - microcrystalline , raman spectroscopy , materials science , silicon , fourier transform infrared spectroscopy , analytical chemistry (journal) , thin film , microcrystalline silicon , spectroscopy , microstructure , hydrogen , nanotechnology , optics , crystalline silicon , chemistry , crystallography , optoelectronics , composite material , amorphous silicon , physics , organic chemistry , chromatography , quantum mechanics
The growth process of microcrystalline silicon thin films deposited at high growth rate was monitored online by optical emission spectroscopy. The properties of the material were studied by Raman and FTIR spectroscopy. The results indicated that the ISiH*/IHβ* ratio decreased during the process, particularly at low total gas flows, which was consistent with the Raman results. The IHβ*/IHα*ratio detected after the plasma glowed for 5 minutes showed that the electronic temperature first decreased then increased with the increasing Ftotal. The FTIR spectra showed that the microstructure defect fraction R first decreased then increased with increasing Ftotal. This means that the electronic temperature in hydrogen plasma plays an important role in determining the properties of the microcrystalline silicon thin films.