Open AccessRevealing the transport mechanisms of silicon oxidation by H218O/H216O isotopic labeling
Author(s) -
Jinlong Gong,
Yiming Jiang,
Cheng Zhong,
Bo Deng,
Ping Liu,
Jin Li
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1305
Subject(s) - silicon , diffusion , materials science , oxide , isotopic labeling , silicon oxide , chemical physics , mechanism (biology) , secondary ion mass spectroscopy , ion , mass transport , chemical engineering , secondary ion mass spectrometry , analytical chemistry (journal) , chemistry , silicon nitride , environmental chemistry , thermodynamics , optoelectronics , physics , engineering physics , organic chemistry , engineering , metallurgy , quantum mechanics
A new method was proposed to investigate the transport mechanism of silicon oxidation at 1100 ℃ using H216O/H218O isotopic labeling. The formation and structure of silicon oxide film was analysed. The distribution of 16O and 18O in the oxide film was analysed by means of secondary ion mass spectroscopy (SIMS). The results demonstrate that the oxide film is non-crystalline during the oxidation of silicon in the water vapor and the transport mechanism is substitutional diffusion mechanism.