Open AccessUltraviolet resonant Raman scattering in InGaN films
Author(s) -
Ruimin Wang,
Guangde Chen
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
ISSN - 1000-3290
DOI - 10.7498/aps.58.1252
Subject(s) - raman scattering , raman spectroscopy , phonon , materials science , diffraction , ultraviolet , resonance (particle physics) , photon energy , spectral line , scattering , x ray raman scattering , laser , line (geometry) , band gap , photon , atomic physics , condensed matter physics , molecular physics , optics , physics , optoelectronics , geometry , mathematics , astronomy
Ultraviolet Raman scattering spectra of InxGa1-xN films with different In compositions were investigated using 325nm laser line. For photon energy above the energy gap, strong enhanced 2A1(LO)phonon scattering lines were observed. Four 2LO peaks shift from twice the energy of the first-order LO peak, to the high energy end and the shifts increase with In contents in the samples. It is attributed to the multiple resonance resulting from intraband-Frhlich interaction. The composition dependence of LO phonon mode frequency and line shape was analysed. The phase separation was observed in Raman spectra and compared with the data of X-ray diffraction. Furthermore, the E2 phonon combination mode of InxGa1-xN was observed at about 1310cm-1.