Open AccessInfluence of 60Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors
Author(s) -
Gu Wen-Ping,
Jincheng Zhang,
Chong Wang,
Feng Qian,
Xiaohua Ma,
Yue Hao
Publication year - 2009
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.58.1161
Subject(s) - materials science , irradiation , high electron mobility transistor , threshold voltage , optoelectronics , transistor , leakage (economics) , electron , equivalent series resistance , radiation , electron mobility , voltage , electrical engineering , optics , physics , engineering , quantum mechanics , nuclear physics , economics , macroeconomics
AlGaN/GaN high electron mobility transistors (HEMT) unpassivated with different gate lengths are irradiated with 60Co γ-rays to doses up to 1 Mrad(Si). The bigger the doses are and the smaller the gate lengthis, the greater the changes in drain current and transconductanceare. While the gate leakage current is significantly increased after irradiation, the threshold voltage is relatively unaffected. By analysing the series resistance of channel and the threshold voltage, we find that irradiation induced electronegative surface state charges is one of the important reasons of radiation damage.