Open AccessDispersion relation model of valence band in strained Si
Author(s) -
Jianjun Song,
Heming Zhang,
Xianying Dai,
Huiyong Hu,
Xuan Rong-Xi
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.7228
Subject(s) - dispersion relation , hamiltonian (control theory) , effective mass (spring–mass system) , valence band , electronic band structure , valence (chemistry) , materials science , condensed matter physics , wave vector , electron mobility , physics , band gap , quantum mechanics , mathematics , mathematical optimization
There has been much interest lately in the strained Si CMOS technology used for carrier mobility enhancement. The dispersion relation of valence band in strained Si is the theoretical basis for understanding and enhancing hole mobility. With in the frame of K.P theory, the dispersion relation is derived by taking strained Hamiltonian perturbation into account. The corresponding model obtained can be applied to calculate the valence band structure and hole effective mass along arbitrarily K wavevector direction in strained Si grown on arbitrarily oriented relaxed Si1xGex(0≤x≤0.6) substrates, and hence is valuable as reference for the design of devices.