Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons | Zendy

Lei Hua | Zendy; Guofeng Song | Zendy; Baoshan Guo | Zendy; Wang Wei-min | Zendy; Yu Zhang | Zendy

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Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons

Author(s) -

Lei Hua,

Guofeng Song,

Baoshan Guo,

Wang Wei-min,

Yu Zhang

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.7210

Subject(s) - materials science , dopant , surface plasmon , doping , plasmon , semiconductor , surface plasmon polariton , transmission (telecommunications) , polariton , infrared , optoelectronics , optics , coupling (piping) , physics , telecommunications , computer science , metallurgy

Transmission of electromagnetic wave in a heavily doped n-type GaAs film is studied theoretically. From the calculations, an extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies is found. This extraordinary transmission is attributed to the coupling of the surface-plasmon polariton modes and waveguide modes. By selecting a set of groove parameters, the transmission is optimized to a maximum. Furthermore, the transmission can be tuned by dopant concentrations. As the dopant concentration increases, the peak position shifts to higher frequency but the peak value decreases.

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