Optical band gap of cubic boron nitride thin films deposited by sputtering | Zendy

Jinxiang Deng | Zendy; Xuyang Wang | Zendy; Qian Yao | Zendy; Tao Zhou | Zendy; Zhang Xiao-Kang | Zendy

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Optical band gap of cubic boron nitride thin films deposited by sputtering

Author(s) -

Jinxiang Deng,

Xuyang Wang,

Qian Yao,

Tao Zhou,

Zhang Xiao-Kang

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.6631

Subject(s) - materials science , boron nitride , thin film , sputtering , band gap , fourier transform infrared spectroscopy , attenuation coefficient , infrared , absorption (acoustics) , analytical chemistry (journal) , optics , sputter deposition , optoelectronics , chemistry , nanotechnology , physics , composite material , chromatography

Cubic boron nitride thin films were deposited on silicon (100) substrates by sputtering. The films were characterized by Fourier transform infrared (FTIR) spectroscopy. The reflectance R(λ) of the films was obtained as a function of incident photon wavelengths and the thickness of the films was measured by Alpha-step. Using Kramers-Kronig transform and the reflectance spectrum R(λ), we calculated the absorption coefficient. The optical band gap was found to be 5.38eV for the films containing 55.4% of cubic phase.

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