Open AccessOptical band gap of cubic boron nitride thin films deposited by sputtering
Author(s) -
Jinxiang Deng,
Wang Xu-Yang,
Qian Ye,
Tao Zhou,
Xiaokang Zhang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.6631
Subject(s) - materials science , boron nitride , thin film , sputtering , band gap , fourier transform infrared spectroscopy , attenuation coefficient , infrared , absorption (acoustics) , analytical chemistry (journal) , optics , sputter deposition , optoelectronics , chemistry , nanotechnology , physics , composite material , chromatography
Cubic boron nitride thin films were deposited on silicon (100) substrates by sputtering. The films were characterized by Fourier transform infrared (FTIR) spectroscopy. The reflectance R(λ) of the films was obtained as a function of incident photon wavelengths and the thickness of the films was measured by Alpha-step. Using Kramers-Kronig transform and the reflectance spectrum R(λ), we calculated the absorption coefficient. The optical band gap was found to be 5.38eV for the films containing 55.4% of cubic phase.