Open AccessA new partial SOI high voltage device with double-faced step buried oxide structure
Author(s) -
Qi Li,
Bo Zhang,
Zhaoji Li
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.6565
Subject(s) - silicon on insulator , materials science , optoelectronics , breakdown voltage , electric field , voltage , substrate (aquarium) , silicon , oxide , insulator (electricity) , layer (electronics) , low voltage , high voltage , electrical engineering , nanotechnology , physics , engineering , oceanography , quantum mechanics , geology , metallurgy
A novel PSOI (partial silicon_on_insulator) high voltage device with double-faced step buried oxide is proposed, which is called DSB PSOI(PSOI with double_faced step buried_oxide layer). The surface electric field has ideally uniform distribution due to the additive electric field modulation by double step buried oxide. A silicon window underneath the source helps to reduce self-heating.The depletion region spreads into the substrate and the vertical electric field in the buried layer is enhanced, which results in a higher breakdown voltage than that of conventional SOI device. A 2-D quantified optimal relation between the structure parameters is also obtained. The results indicate that the breakdown voltage of DSB PSOI is increased by 58% in comparison with conventional SOI, while maintaining the low on-resistance of the DSB PSOI device.