Open AccessInfluence of annealing on structure and optical band gap of nitrogen doping fluorinated amorphous carbon films
Author(s) -
Aihua Jiang,
Xiao Jian-rong,
De’an Wang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.6013
Subject(s) - materials science , annealing (glass) , plasma enhanced chemical vapor deposition , band gap , amorphous solid , carbon film , raman spectroscopy , amorphous carbon , chemical vapor deposition , doping , analytical chemistry (journal) , fourier transform infrared spectroscopy , nitrogen , thin film , optoelectronics , chemical engineering , optics , nanotechnology , crystallography , chemistry , composite material , organic chemistry , physics , engineering
Radio frequency plasma enhance chemical vapor deposition (RF-PECVD) was used todeposit nitrogen doped fluorinated amorphous carbon (a -C:F,N) films with CF4, CH4 and N2 as source gases. We focused on the influence of annealing temperature on the structure and optical band gap (Eg) of the films. The as-deposited films undergo significant chemical and optical changes during annealing. The films are thermally stable at 350℃. The optical band gap shows decrease of different degrees with increasing annealing temperature. Raman and Fourier transform infrared absorption spectra show that the relative content of F in the films decreased, while the content of sp2 carbon increased, and as a result, the density of states near the band edgye of σ-σ* decreases, which is responsible for the increasing Eg.