Open AccessStudy of the growth characteristics of SiCGe layers grown on 6H-SiC substrates
Author(s) -
Tong Lin,
Zhiming Chen,
Jia Li,
Lianbi Li,
Qingmin Li,
Hongbin Pu
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.6007
Subject(s) - materials science , growth rate , x ray photoelectron spectroscopy , scanning electron microscope , layer (electronics) , chemical vapor deposition , morphology (biology) , deposition (geology) , electron microscope , analytical chemistry (journal) , composite material , nanotechnology , optics , chemical engineering , chemistry , paleontology , geometry , mathematics , physics , chromatography , sediment , engineering , biology , genetics
SiCGe layers were grown on 6H-SiC (0001) substrates by low pressure hot wall chemical vapor deposition at different temperatures (1100℃—1250℃) and with different GeH4 flow-rate ratios (6.3%—25%). Surface morphology, growth characteristics, and Ge contents of the samples were studied. Results of scan electron microscope images show that the SiCGe layers tend to grow in an island growth mode at lower temperatures, and the growth mode will change to the layer by layer mode accompanied by changes in island form and density as the growth temperature increases. X-ray photoelectron spectroscopy tests show that the Ge contents in the samples are in a range of 0.15 to 0.62, and they increase with the increase of GeH4 flow rates and the decrease of growth temperatures when other growth parameters are kept constant. Additionally, antiphase boundary (APB) defects in the SiCGe layers were analyzed qualitatively.