Research on the high-rate deposition of μc-Si:H by VHF-PECVD | Zendy

Xuejun Guo | Zendy; Jingxiao Lu | Zendy; Yongsheng Chen | Zendy; Zhang Qing-feng | Zendy; Wen S | Zendy; Zheng Wen | Zendy; Shen Chen-Hai | Zendy; Qingdong Chen | Zendy

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Research on the high-rate deposition of μc-Si:H by VHF-PECVD

Author(s) -

Xuejun Guo,

Jingxiao Lu,

Yongsheng Chen,

Zhang Qing-feng,

Wen S,

Zheng Wen,

Shen Chen-Hai,

Qingdong Chen

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.6002

Subject(s) - plasma enhanced chemical vapor deposition , materials science , deposition (geology) , silane , substrate (aquarium) , volumetric flow rate , layer (electronics) , analytical chemistry (journal) , silicon , optoelectronics , composite material , chemistry , chromatography , sediment , biology , geology , paleontology , oceanography , physics , quantum mechanics

The μc-Si:H films were deposited by VHF-PECVD, the effects of silane concentration, power density, deposition pressure and total flow rate on the deposition rate and crystallization of μc-Si:H were extensively studied. Phase diagram in the plot of deposition pressure against power was determined. The deposition rate of μc-Si:H has reached 0.75nm/s. Incorporating such μc-Si:H films as i-layer, the single-junction solar cell on glass substrate showed an conversion efficiency of 5.5%.

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