Open AccessResearch on the high-rate deposition of μc-Si:H by VHF-PECVD
Author(s) -
Xuejun Guo,
Jingxiao Lu,
Yongsheng Chen,
Qingfeng Zhang,
Shizhu Wen,
Zheng Wen,
Chengmin Shen,
Qingdong Chen
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.6002
Subject(s) - plasma enhanced chemical vapor deposition , materials science , deposition (geology) , silane , substrate (aquarium) , volumetric flow rate , layer (electronics) , analytical chemistry (journal) , silicon , optoelectronics , composite material , chemistry , chromatography , sediment , biology , geology , paleontology , oceanography , physics , quantum mechanics
The μc-Si:H films were deposited by VHF-PECVD, the effects of silane concentration, power density, deposition pressure and total flow rate on the deposition rate and crystallization of μc-Si:H were extensively studied. Phase diagram in the plot of deposition pressure against power was determined. The deposition rate of μc-Si:H has reached 0.75nm/s. Incorporating such μc-Si:H films as i-layer, the single-junction solar cell on glass substrate showed an conversion efficiency of 5.5%.