Negative capacitance in polymer light-emitting diodes | Zendy

Wenbo Huang | Zendy; Zeng Wen-Jin | Zendy; Li Wang | Zendy; Junbiao Peng | Zendy

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Negative capacitance in polymer light-emitting diodes

Author(s) -

Wenbo Huang,

Zeng Wen-Jin,

Li Wang,

Junbiao Peng

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.5983

Subject(s) - pedot:pss , materials science , capacitance , dielectric spectroscopy , oled , diode , optoelectronics , light emitting diode , layer (electronics) , polymer , band diagram , band gap , composite material , electrode , chemistry , electrochemistry

A.c. electrical properties of the heterostructured polymer light-emitting diode consisting of poly2-methoxy-5-(2′-ethyl-hexyloxy)- 1, 4-phenylenevinylene(MEH-PPV) as the light-emitting layer, and poly(9,9 - bis(3′-(N,N-dimethylamino) propyl)-2,7- fluorene)-alt-2,7-(9,9-dioctylfluorene) (PF-NR2) as the electron-injecting layer, are studied by using impedance spectroscopy. Negative capacitance in impedance spectroscopic data has been observed. According to the Cole-Cole plot of the device ITO/PEDOT/MEH-PPV/PF-NR2/Al, the a.c. response of MEH-PPV/PF-NR2 interface can be explained in terms of the equivalent circuit model of a parallel combination of an inductance L and a resistance RL. The experiments showed that PF-NR2 could act as an electron injecting and hole blocking layer. We propose an energy band structure schematic diagram to explain the enhancement of the EL efficiency in the ITO/PEDOT/MEH-PPV/PF-NR2/Al structure.

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