Numerical model of ITO /organic semiconductor/metal organic light emitting device | Zendy

Hu Yue | Zendy; Haibo Rao | Zendy; Junfei Li | Zendy

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Numerical model of ITO /organic semiconductor/metal organic light emitting device

Author(s) -

Hu Yue,

Haibo Rao,

Junfei Li

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.5928

Subject(s) - oled , anode , materials science , organic semiconductor , diffusion , metal , electrode , current density , charge (physics) , semiconductor , charge density , cathode , optoelectronics , condensed matter physics , thermodynamics , physics , composite material , chemistry , layer (electronics) , quantum mechanics , metallurgy

A numerical model of organic light emitting device (OLED) with metal/organic/metal structure was discussed on the basis of drift-diffusion equations in this paper. Firstthe influence of charges localized near the electrodes to the J-V curve was calculated and we got the same result of the literature. Second, the J-V curve of OLED with structure of ITO/PPV/Ca was simulated. In the simulation, the case of positive charge distribution localized near the anode was considered. The calculated J-V curve was in good agreement with the experiment. The charge creates an additional barrier and has a noted influence on the current density.

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