Electronic properties of quantum wires in surface-acoustic-wave based single-electron transport devices
Author(s) -
Li Hong,
Huazhong Guo,
Lü Chuan,
Li Ling,
Jie Gao
Publication year - 2008
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5863
Subject(s) - electron , heterojunction , quantum wire , materials science , condensed matter physics , quantum , quantum point contact , quantum dot , quantum well , voltage , physics , optoelectronics , optics , quantum mechanics , laser
By fabricating a split gate on the surface of AlxGa1-xAs/GaAs heterostructurewe experimentally obtain a quasi-one-dimensional quantum wire. This structure could be used to implement single-electron transport driven by surface acoustic waves. Based on structures of conduction band and distribution of electrons in the fabricated quantum wiresthe influence of quantum-wire widths on the confining potential of the electrons is also discussed. Especiallywe numerically study how the linear electron concentration depends on the applied split-gate voltage. For the quantum wires fabricatedwe find that the calculated pinch-off voltages agree well with the relevant experimental values measured at 0.3K.
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