Open AccessInfluence of doping level on electrical properties of ZnO-based composite varistor
Author(s) -
Xiuli Fu,
Weihua Tang,
Zhijian Peng
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5844
Subject(s) - varistor , materials science , doping , bismuth , antimony , composite material , electric field , field strength , composite number , optoelectronics , electrical engineering , voltage , metallurgy , physics , quantum mechanics , engineering , magnetic field
ZnO-based varistors with different doping levels of antimony and bismuth are prepared and their electrical properties are measured. It is found that when the doping level of Sb is smallwith the amount of Sb2O3 increasingthe leakage current changes littleboth nonlinear coefficient αL and breakdown nonlinear coefficient αB decrease but both field strength EL and breakdown field strength EB increase; when the doping level of Sb is highwith more Sb2O3 addedthe leakage current increases sharplyαL and αB decrease furtherand EL and EB drop down suddenly. With doping level of Bi increasingthe leakage current increasesαL and αB increasebut EL and EB decrease.