Open AccessLow energy oscillatory phenomena in photoreflectance and photo-modulation reflectance spectra of GaMnAs films grown by low temperature molecular-beam epitaxy
Author(s) -
Luo Xiang-dong,
Changjian Ji,
Yuqi Wang,
Jiang Wang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5277
Subject(s) - molecular beam epitaxy , spectral line , materials science , doping , band gap , condensed matter physics , gallium arsenide , optics , optoelectronics , epitaxy , physics , layer (electronics) , nanotechnology , astronomy
GaMnAs grown by low temperature molecular beam epitaxy have been investigated by Fourier transform infrared and photo-modulation reflectance (PR) measurements. Besides the band gap of Ga(Mn)AsFranz-Keldysh oscillations and spin-orbit coupling energy low energy oscillations lower than the GaAs band gap were well observed in the PR spectra of GaMnAs. And these oscillations were also observed clearly in reflectance spectra of GaMnAs. By fitting the oscillations of the reflectance spectra it was attributed to the variable refractive indexes induced by the high hole density in GaMnAs which was caused by Mn doping in GaAs. At the same time the PR spectra of high-resistance GaMnAs at low temperature were also studied.