Open AccessEffects of external magnetic field on the effective g factor of (Ga，Mn)As
Author(s) -
Zhou Rong,
Binyong Sun,
Ruan Xue-Zhong,
Huadong Gan,
Jinming Yang,
Wang Weizhu,
Jianhua Zhao
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5244
Subject(s) - condensed matter physics , magnetization , magnetic field , precession , magnetic semiconductor , materials science , ion , doping , field (mathematics) , kerr effect , physics , spin (aerodynamics) , mathematics , quantum mechanics , nonlinear system , pure mathematics , thermodynamics
With the help of time resolved magneto-optic Kerr rotation measurements the optically induced spin precession in heavily doped diluted magnetic semiconductor Ga0.937Mn0.063As was observed. It was found that the effective g factor increases with increasing magnetic field which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. Those free holes will couple with the localized magnetic ions by p-d interactions leading to the formation of spontaneous magnetization in Ga0.937Mn0.063As which in turn to the enhancement of the effective g factor.