Effects of external magnetic field on the effective g factor of (Ga，Mn)As | Zendy

Rong Zhou | Zendy; Sun Bao-Quan | Zendy; Ruan Xue-Zhong | Zendy; Huadong Gan | Zendy; Ji Won Yang | Zendy; Wang Wei-Zhu | Zendy; Zhao Jian-Hua | Zendy

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Effects of external magnetic field on the effective g factor of (Ga，Mn)As

Author(s) -

Rong Zhou,

Sun Bao-Quan,

Ruan Xue-Zhong,

Huadong Gan,

Ji Won Yang,

Wang Wei-Zhu,

Zhao Jian-Hua

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.5244

Subject(s) - condensed matter physics , magnetization , magnetic field , precession , magnetic semiconductor , materials science , ion , doping , field (mathematics) , kerr effect , physics , spin (aerodynamics) , mathematics , quantum mechanics , nonlinear system , pure mathematics , thermodynamics

With the help of time resolved magneto-optic Kerr rotation measurements the optically induced spin precession in heavily doped diluted magnetic semiconductor Ga0.937Mn0.063As was observed. It was found that the effective g factor increases with increasing magnetic field which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. Those free holes will couple with the localized magnetic ions by p-d interactions leading to the formation of spontaneous magnetization in Ga0.937Mn0.063As which in turn to the enhancement of the effective g factor.

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