Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well | Zendy

Shang Li-Yan | Zendy; Lin Tie | Zendy; Zhou Wen-Zheng | Zendy; LI Dong-lin | Zendy; Gao Hong-Ling | Zendy; Yiping Zeng | Zendy; Guo Shao-Ling | Zendy; Guolin Yu | Zendy; Chu Jun-Hao | Zendy

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Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well

Author(s) -

Shang Li-Yan,

Lin Tie,

Zhou Wen-Zheng,

LI Dong-lin,

Gao Hong-Ling,

Yiping Zeng,

Guo Shao-Ling,

Guolin Yu,

Chu Jun-Hao

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.5232

Subject(s) - magnetoresistance , condensed matter physics , scattering , quantum well , magnetic field , shubnikov–de haas effect , electron , electron mobility , materials science , range (aeronautics) , fermi gas , physics , quantum oscillations , quantum mechanics , laser , composite material

Magnetotransport measurements have been carried out on In0.53Ga0.47As/In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77K. We have observed a large positive magnetoresistance in the low magnetic field range but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.

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