Open AccessPositive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
Author(s) -
Liyan Shang,
Te-Hsien Lin,
Weixing Zhou,
Li Dl,
HL Gao,
YP Zeng,
Guo Sl,
G. L. Yu,
JH Chu
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5232
Subject(s) - magnetoresistance , condensed matter physics , scattering , quantum well , magnetic field , shubnikov–de haas effect , electron , electron mobility , materials science , range (aeronautics) , fermi gas , physics , quantum oscillations , quantum mechanics , laser , composite material
Magnetotransport measurements have been carried out on In0.53Ga0.47As/In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77K. We have observed a large positive magnetoresistance in the low magnetic field range but saturating in high magnetic fields. The magnetoresistance results from two occupied subbands in the two-dimensional electron gas. With the intersubband scattering considered we obtained the subband mobility by analyzing the positive magnetoresistance. It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.