Open AccessRadiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise
Author(s) -
Peng Shao-Quan,
Du Lei,
Yiqi Zhang,
Junlin Bao,
Liang He,
Weihua Chen
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5205
Subject(s) - irradiation , mosfet , noise (video) , materials science , field effect transistor , threshold voltage , transistor , optoelectronics , infrasound , oxide , noise power , flicker noise , physics , computational physics , condensed matter physics , voltage , power (physics) , cmos , noise figure , thermodynamics , acoustics , amplifier , quantum mechanics , artificial intelligence , computer science , nuclear physics , metallurgy , image (mathematics)
Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation a quantitative mathematic model between pre-irradiation 1/f noise parameters and post-irradiation threshold voltage drift due to oxide traps and interface traps is established. It agrees well with the experimental results. This model shows that 1/f noise in MOSFET is priginates from the random trapping/detrapping processes between oxide traps and the channel which causes fluctuations in both the number and the mobility of channel carriers. So pre-irradiation 1/f noise magnitude is directly proportional to post-irradiation oxide-trap charge. The results not only explain the correlation between MOSFET pre-irradiation 1/f noise power spectral density and radiation degradation in theory but also provide the theory for forecasting MOSFET radiation-resistant capability.