Open AccessSubstrate temperature and B-doping effects on microstructure and electronic properties of p-type hydrogenated microcrystalline silicon films
Author(s) -
Shie Yang,
Li Wen,
Yongsheng Chen,
Changzhou Wang,
Jiande Gu,
Xiaoyong Gao,
Jingxiao Lu
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.5176
Subject(s) - materials science , doping , substrate (aquarium) , microstructure , microcrystalline , silicon , thin film , chemical vapor deposition , amorphous solid , volume fraction , amorphous silicon , microcrystalline silicon , plasma enhanced chemical vapor deposition , conductivity , analytical chemistry (journal) , chemical engineering , composite material , nanotechnology , crystalline silicon , optoelectronics , crystallography , chemistry , organic chemistry , oceanography , engineering , geology
P-type hydrogenated microcrystalline silicon thin films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition with B2H6 as a doping gas. The effects of substrate temperature and the doping ratio on the microstructure and dark conductivity of the p-type hydrogenated microcrystalline silicon films have been investigated. The results show that the films deposited at higher substrate temperature are amorphous even if the doping ratio is very low. The crystalline volume fraction of films monotonically decreases and the dark conductivity initially increases slowly and then decreases rapidly with substrate temperature increasing, which is very similar to the effects of the doping ratio. Finally the growth mechanism of p-type hydrogenated microcrystalline silicon thin films has been discussed in particular.