Open AccessOne-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization
Author(s) -
Yao Yao,
Zhong-Hui Fang,
Ji Zhou,
Wei Li,
Zhongyuan Ma,
Jun Xu,
Xinfan Huang,
Kunji Chen,
Yasuyuki Miyamoto,
Satoshi Oda
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.4960
Subject(s) - materials science , crystallization , laser , nanocrystalline material , silicon , transmission electron microscopy , raman spectroscopy , nanocrystalline silicon , optics , irradiation , grating , optoelectronics , crystalline silicon , nanotechnology , amorphous silicon , chemistry , physics , organic chemistry , nuclear physics
One-dimensional periodic nanocrystalline silicon (nc-Si) arrays were fabricated by laser interference crystallization combined with one-dimensional phase shifting grating mask (PSGM). The laser energy density irradiated on the surface of samples with different thicknesses of a-Si:H can be modulated by the PSGM with periodicity of 400 nm. Raman spectra confirmed the crystallization of the irradiated stripe-patterned area of the samples. The transmission electron microscopic and atomic force microscopic images demonstrate that the periodicity of one-dimensional nc-Si arrays is the same as that of the PSGM. And by controlling the laser energy density, a stripe width of 30 nm in each period was obtained as the thickness of a-Si:H decreased from 10 to 4 nm. The high resolution transmission electron microscope images show the clear crystalline lattice of nc-Si within the stripe patterns.