Open AccessThe power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes
Author(s) -
Bingqian Li,
Yuhua Liu,
Feng Yang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.477
Subject(s) - equivalent series resistance , materials science , dissipation , diode , light emitting diode , optoelectronics , junction temperature , power (physics) , thermal management of high power leds , maximum power principle , series (stratigraphy) , voltage , electrical engineering , physics , thermodynamics , paleontology , biology , engineering
Because of the self-heating effect of InGaN based high power light-emitting diodes (LEDs), the temperature of the LED chip is much higher than the case temperature (TC). The maximum Tj in our experiment is 148K higher above the case temperature. The voltage drops on p-n junction and equivalent series resistance are extracted from the measured I-V curve, and then the values of equivalent series resistance at different forward power are obtained. Due to the self-heating effect, the values of equivalent series resistance show a very strong forward power-dependent characteristics, the maximum equivalent series resistance reported in this paper is about 1.9Ω at high forward power, being more than twice the minimum value. The power dissipation of equivalent series resistance is increased sharply when the forward power is increased, nearly half of the forward electrical power was dissipated on equivalent series resistance at high power, and it becomes the an important factor restraining the lumen efficiency of high power GaN based light emitting diodes.