Open AccessStrong electron emission of antiferroelectric ceramic
Author(s) -
Sheng Zhao-Xuan,
Yujun Feng,
Xuan Huang,
Chao Wang,
Xinli Sun
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.4590
Subject(s) - materials science , antiferroelectricity , electron , cathode , atomic physics , plasma , current density , ceramic , ferroelectricity , physics , optoelectronics , dielectric , chemistry , composite material , quantum mechanics
The electron emission of a novel antiferroelectric cathode material La-doped Pb(ZrSnTi)O3(PLZST)has been studied. For driving voltage of 800V and accelerating voltage of 0Vthe emission current density was 1.27A/cm2. For driving voltage of 800V and accelerating voltage of 4kVa strong emission current density with 1700A/cm2 was obtained. The dependence of emission current on accelerating voltage was analyzed and the mechanism of antiferroelectric electron emission was discussed. It was found that strong electron emission from antiferroelectric material can be realized under lower driving voltage and the emission current was much larger than that predicted by the Child-Langmuir law. Local antiferroelectric-ferroelectric phase transition in the vicinity of the triple junction leads to initial electron emissionand these initial electrons then cause desorption of gas which had been absorbed at the ceramic surface.The desorbed gas is then ionizedwhich leads to plasma generation. The formation of surface plasma enhances the emission current.