Open AccessEffect of annealing on the high Co-doped Ti1-xCoxO2 magnetic semiconductor
Author(s) -
Hongqiang Song,
Yong Wang,
SS Yan,
L. Mei,
Z Zhang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.4534
Subject(s) - x ray photoelectron spectroscopy , materials science , microstructure , annealing (glass) , doping , magnetic semiconductor , transmission electron microscopy , semiconductor , sputtering , metastability , magnetism , analytical chemistry (journal) , nuclear magnetic resonance , optoelectronics , nanotechnology , thin film , condensed matter physics , metallurgy , physics , chemistry , quantum mechanics , chromatography
High Co doping concentration Ti1-xCoxO2 magnetic semiconductor films were prepared by rf co-sputtering and then annealed for 2 hours at 200℃, 300℃ and 400℃ respectively. Microstructure and composition analysis by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the films were in the metastable state and the annealing has large effect on their microstructure, composition and magnetism.