Open AccessStudy on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing
Author(s) -
Ruobing Lin,
Wang Xin-Juan,
Feng Qian,
Chong Wang,
Jincheng Zhang,
Yue Hao
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.4487
Subject(s) - materials science , annealing (glass) , schottky barrier , optoelectronics , schottky diode , x ray photoelectron spectroscopy , transistor , induced high electron mobility transistor , electron mobility , high electron mobility transistor , voltage , composite material , electrical engineering , nuclear magnetic resonance , diode , physics , engineering
Under different stress, the current collapse, gate current leakage and breakdown voltages of AlGaN/GaN high electron mobility transistors change before and after high temperature annealing. The results show that characteristics of devices are greatly improved for AlGaN/GaN high electron mobility transistor after Schottky high temperature annealing. Interface of Schottky contacts is studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) before and after high temperature annealing. The analysis indicates that eliminating the medium between Ni and AlGaN and reducing of traps near the surface of AlGaN can improve the effective Schottky barrier, which can enhance the electric characteristics of the devices.