Open AccessEffect of control oxide on the performance of nanocrystalline silicon based double-barrier floating gate memory structure
Author(s) -
Ding Hong-Lin,
Kui Liu,
Xiang Wang,
Zhong-Hui Fang,
Huang Jian,
Lie Yu,
Wei Li,
Xinfan Huang,
Kunji Chen
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.4482
Subject(s) - materials science , plasma enhanced chemical vapor deposition , silicon , nanocrystalline silicon , gate oxide , amorphous solid , oxide , optoelectronics , layer (electronics) , nanocrystalline material , chemical vapor deposition , breakdown voltage , substrate (aquarium) , amorphous silicon , analytical chemistry (journal) , nanotechnology , voltage , electrical engineering , crystalline silicon , transistor , metallurgy , engineering , chemistry , oceanography , organic chemistry , chromatography , geology
The silicon dioxide (SiO2) film was fabricated from layer-by-layer depositing amorphous silicon (a-Si) film combined with step-by-step plasma oxidation in the plasma-enhanced chemical vapor deposition (PECVD) system. The capacitance-voltage(C-V) and conductance-voltage(G-V) characteristics show that the fixed charge and interface state densities of the SiO2 film are 9×1011 cm-2 and 2×1011 cm-2·eV-1, respectively. Furthermore, the breakdown field strength is as high as 4.6 MV/cm, which is comparable to that formed by hot oxidation. The prepared SiO2 is employed as control oxide in nc-Si based double-barrier floating gate memory structure and is found to be an effective way to prevent the charge exchange between the gate electrode and nc-Si, which also lead to an enhancement in the retention time. The improved performance of the memory is discussed and is ascribe to the moderate-thickness of SiO2 as well as its excellent electrical properties.