Open AccessStacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam
Author(s) -
Qingfeng Guan,
Bo Chen,
Qingyu Zhang,
Dong Chen,
Guangtian Zou
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.392
Subject(s) - vacancy defect , stacking fault , materials science , nucleation , microstructure , stacking , void (composites) , aluminium , cluster (spacecraft) , transmission electron microscopy , single crystal , tetrahedron , dislocation , electron beam processing , crystal (programming language) , electron , irradiation , crystallography , molecular physics , nanotechnology , composite material , chemistry , physics , nuclear magnetic resonance , organic chemistry , quantum mechanics , computer science , programming language , nuclear physics
The specimens of single-crystal aluminum were irradiated with high current pulsed electron beam (HCPEB). The vacancy cluster defect microstructure has been investigated by using transmission electron microscopy (TEM). The results show that three types of vacancy clusters including dislocation loop, void and even stacking fault tetrahedron (SFT), which are not normally formed in metals with high SFT formation energy, can be formed in single-crystal aluminum specimens irradiated with HCPEB. The nucleation process of three types of vacancy clusters do not appear at the same time. There is a close relationship between the three types of vacancy clusters. Based on the experimental results, a possible mechanism of SFT formation and evolution was presented.