Open AccessThe influence of n-layer on structural properties of i-layer in n-i-p μc-Si∶H thin film solar cells
Author(s) -
Yujie Yuan,
Guofu Hou,
Xue Jun-Ming,
Xiaopeng Han,
Liu Yun-Zhou,
Yang Xing-Yun,
Liu Li-Jie,
Ping Dong,
Ying Zhao,
Xin Geng
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3892
Subject(s) - materials science , layer (electronics) , microcrystalline , plasma enhanced chemical vapor deposition , amorphous solid , thin film , microcrystalline silicon , chemical vapor deposition , deposition (geology) , thin film solar cell , analytical chemistry (journal) , composite material , amorphous silicon , optoelectronics , crystallography , nanotechnology , chemistry , crystalline silicon , chromatography , paleontology , sediment , biology
The intrinsic layers with different thickness were deposited on amorphous n-type layers and microcrystalline n-type layers respectively, and all samples were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The effect of different n-type layers on structural properties of i-layer was studied. It is concluded that the highly microcrystalline n-layer can reduce the thickness of incubation layer, promote structural uniformity of i-layer and improve the performance of n-i-p μc-Si:H thin film solar cells.