Open AccessStudy of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy
Author(s) -
Chen Xiao-Xue,
Teng Li-Hua,
Xiaodong Liu,
Huang Qi-Wen,
Jin Wen,
Lin Wang,
Tianshu Lai
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3853
Subject(s) - spins , femtosecond , relaxation (psychology) , spectroscopy , materials science , electron , absorption spectroscopy , condensed matter physics , circular polarization , polarization (electrochemistry) , valence (chemistry) , spin polarization , atomic physics , molecular physics , optics , physics , laser , chemistry , psychology , social psychology , quantum mechanics , microstrip
The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.