Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy | Zendy

Xiaoxue Chen | Zendy; Teng Li-Hua | Zendy; Xiaodong Liu | Zendy; Huang Qi-Wen | Zendy; Wen Jin-Hui | Zendy; Lin Wei-Zhu | Zendy; Lai Tian-Shu | Zendy

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Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

Author(s) -

Xiaoxue Chen,

Teng Li-Hua,

Xiaodong Liu,

Huang Qi-Wen,

Wen Jin-Hui,

Lin Wei-Zhu,

Lai Tian-Shu

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.3853

Subject(s) - spins , femtosecond , relaxation (psychology) , spectroscopy , materials science , electron , absorption spectroscopy , condensed matter physics , circular polarization , polarization (electrochemistry) , valence (chemistry) , spin polarization , atomic physics , molecular physics , optics , physics , laser , chemistry , psychology , social psychology , quantum mechanics , microstrip

The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.

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