Open AccessElectron field emission of nanocrystalline Si prepared by laser crystallization
Author(s) -
Jing Zhou,
Wei De-Yuan,
Jun Xu,
Wei Li,
Fengqi Song,
Wan Jian-Guo,
Xu Li,
Zhongyuan Ma
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3674
Subject(s) - nanocrystalline material , materials science , field electron emission , crystallization , amorphous solid , electric field , excimer laser , annealing (glass) , thin film , electron , laser , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemical engineering , crystallography , composite material , chemistry , physics , chromatography , quantum mechanics , engineering
The electron field emission characteristics of nanocrystalline Si thin films prepared by KrF excimer laser crystallization of ultrathin amorphous Si films and subsequent thermal annealing is reported. Stable and reproducible field emissionbehavior can be observed for the crystallized Si films. The turn-on electric field is reduced from 17V/μm for the as-deposited sample to 85V/μm for the crystallized one, and the emission current density can reach as high as 01mA/cm2 The improvement in field emission characteristics is attributed to both the change of film surface and the formation of high-density nanocrystalline Si, which induces the enhancement of internal local electric field.