Electron field emission of nanocrystalline Si prepared by laser crystallization | Zendy

Zhou Jiang | Zendy; Wei De-Yuan | Zendy; Xu Jun | Zendy; Li Wei | Zendy; Fengqi Song | Zendy; Wan Jian-Guo | Zendy; Ling Xu | Zendy; Zhongyuan Ma | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Electron field emission of nanocrystalline Si prepared by laser crystallization

Author(s) -

Zhou Jiang,

Wei De-Yuan,

Xu Jun,

Li Wei,

Fengqi Song,

Wan Jian-Guo,

Ling Xu,

Zhongyuan Ma

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.3674

Subject(s) - nanocrystalline material , materials science , field electron emission , crystallization , amorphous solid , electric field , excimer laser , annealing (glass) , thin film , electron , laser , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemical engineering , crystallography , composite material , chemistry , physics , chromatography , quantum mechanics , engineering

The electron field emission characteristics of nanocrystalline Si thin films prepared by KrF excimer laser crystallization of ultrathin amorphous Si films and subsequent thermal annealing is reported. Stable and reproducible field emissionbehavior can be observed for the crystallized Si films. The turn-on electric field is reduced from 17V/μm for the as-deposited sample to 85V/μm for the crystallized one, and the emission current density can reach as high as 01mA/cm2 The improvement in field emission characteristics is attributed to both the change of film surface and the formation of high-density nanocrystalline Si, which induces the enhancement of internal local electric field.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research