Open AccessChange in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate
Author(s) -
Chuanbing Xiong,
Fengyi Jiang,
Wenqing Fang,
Wang Li,
Chunlan Mo
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3176
Subject(s) - materials science , light emitting diode , optoelectronics , substrate (aquarium) , layer (electronics) , stress (linguistics) , residual stress , diode , ultimate tensile strength , quantum well , composite material , optics , linguistics , oceanography , philosophy , geology , laser , physics
InGaN multiple-quantum-well(MQW) light-emitting diode(LED) thin films were successfully transferred from the original Si(111) substrate to new Si substrate, and then the vertical structure LEDs were fabricated. After the original substrate removal, the residual tensile stress in GaN layer of the transfferred film is partially relaxed, while the compressive stress in InGaN well layer is increased. When the buffer layer of the transferred LED film was eliminated, the tensile stress in GaN layer was shown to increase. However, the compressive stress in InGaN well layer was kept unvaried. The performance of the vertical LEDs was significantly improved compared with the lateral LEDs.