Open AccessAnalysis of structure parameters and current conduction mechanisms of AlGaN/GaN Schottky contacts
Author(s) -
Wang Xin-Juan,
Jinfeng Zhang,
Jincheng Zhang,
Yue Hao
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3171
Subject(s) - materials science , schottky barrier , schottky diode , heterojunction , optoelectronics , thermal conduction , high electron mobility transistor , metal–semiconductor junction , leakage (economics) , quantum tunnelling , atmospheric temperature range , condensed matter physics , transistor , voltage , electrical engineering , physics , meteorology , composite material , diode , economics , macroeconomics , engineering
An investigation on the current conduction mechanisms of AlGaN/GaN Schottky contacts is presented in this paper. The ideality factor and the barrier height of Schottky contact on AlGaN/GaN heterostructure are calculated by I-V measurement in a wide temperature range. By subtraction of generation-recombination, tunneling and leakage currents from the total current, the “pure" Schottky barrier height can be evaluated with higher physical relevance. After analyzing the variational rules of Schottky contact characteristics on AlGaN/GaN heterostructure at 300—550K, it is concluded that surface leakage current plays an insignificant role in producing the gate leakage current of AlGaN/GaN HEMT.