Open AccessPrevention of misfit dislocations by using nano pillar crystal array substrates
Author(s) -
Zhou Nai-Gen,
Lang Zhou
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.3064
Subject(s) - materials science , pillar , epitaxy , crystal (programming language) , substrate (aquarium) , aluminium , nano , crystal growth , crystallography , nanotechnology , optoelectronics , composite material , layer (electronics) , computer science , structural engineering , chemistry , engineering , programming language , oceanography , geology
Three-dimensional molecular dynamics simulations of epitaxial growth of aluminum film on substrates of nano pillar crystal array have been carried out. The embedded atom method (EAM) potential was employed for computing atomic interaction in aluminum. The results show thatthe nano pillar crystal array substrate can release the misfit strain in the epitaxial film without forming any misfit dislocationsachieving a high quality epitaxial crystal film. Howevertwo conditions must be met: 1) the cross sectional size of pillar crystal should be larger than the critical size of thermal stabilitywhich is 19nm for aluminum at 700K2) the height-space interval ratio of pillar crystals should be higher than 076. The latter ensures that the epitaxial layers on the neighboring pillar crystals can bridge with each otherand form a continuous film free of misfit dislocations.