The extraction method for trap parameters in 4H-SiC MESFETs | Zendy

Lü Hong-Liang | Zendy; Yimen Zhang | Zendy; Yuming Zhang | Zendy; Yong Che | Zendy; Yuehu Wang | Zendy; Liang Chen | Zendy

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The extraction method for trap parameters in 4H-SiC MESFETs

Author(s) -

Lü Hong-Liang,

Yimen Zhang,

Yuming Zhang,

Yong Che,

Yuehu Wang,

Liang Chen

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.2871

Subject(s) - trap (plumbing) , trapping , materials science , extraction (chemistry) , optoelectronics , computer science , equivalent circuit , signal (programming language) , electrical engineering , physics , chemistry , voltage , ecology , chromatography , meteorology , biology , programming language , engineering

The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design and processing.

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