Open AccessThe extraction method for trap parameters in 4H-SiC MESFETs
Author(s) -
Lyu Hong-Liang,
Yimen Zhang,
Yuming Zhang,
Yong Che,
YueHu Wang,
Liang Chen
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.2871
Subject(s) - trap (plumbing) , trapping , materials science , extraction (chemistry) , optoelectronics , computer science , equivalent circuit , signal (programming language) , electrical engineering , physics , chemistry , voltage , ecology , chromatography , meteorology , biology , programming language , engineering
The small signal equivalent circuit of SiC MESFETs has been studied and the parasitic and intrinsic elements have been extracted with both numerical and analytical methods. The trapping-emission mechanism is discussed in detail. The proposed model is valuable for the optimization of the device design and processing.