
Effect of dual-synthetic antiferromagnet structre on giant magnetoresistance in spin valves
Author(s) -
Su Xi-Ping,
Bao Jin,
Shuke Yan,
Xu Xiao-Guang,
Yong Jiang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.2509
Subject(s) - giant magnetoresistance , materials science , antiferromagnetism , magnetoresistance , condensed matter physics , spin (aerodynamics) , spin valve , spin structure , dual layer , layer (electronics) , nanotechnology , magnetic field , physics , quantum mechanics , thermodynamics
The properties of dual-synthetic antiferromagnet (DSAF) structure Co90Fe10(5 nm)/Ru(x nm)/Co90Fe10(3 nm)/Ru(y nm)/Co90Fe10(5 nm) (in which x=0.45 y=0.45; x=0.45 y=1; x=1, y=1) were studied. The effect of DSAF structure on giant magnetoresistance (GMR) single spin-valve (SPV) structures was also studied. The study shows that the properties of DSAF are better than those of the conventional synthetic antiferromagnet Co90Fe10(5 nm)/Ru(0.5 nm)/Co90Fe10(3 nm). We demonstrated that the DSAF structure as a pinned layer dramatically enhances the GMR ratio in single SPV films at room temperature.