Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands | Zendy

Shang Li-Yan | Zendy; Lin Tie | Zendy; Zhou Wen-Zheng | Zendy; Huang Zhi-ming | Zendy; LI Dong-lin | Zendy; Gao Hong-Ling | Zendy; Cui Li-Jie | Zendy; Zeng Yiping | Zendy; Guo Shao-Ling | Zendy; Chu Junhao | Zendy

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Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

Author(s) -

Shang Li-Yan,

Lin Tie,

Zhou Wen-Zheng,

Huang Zhi-ming,

LI Dong-lin,

Gao Hong-Ling,

Cui Li-Jie,

Zeng Yiping,

Guo Shao-Ling,

Chu Junhao

Publication year - 2008

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.57.2481

Subject(s) - scattering , quantum well , electron , shubnikov–de haas effect , condensed matter physics , physics , electron density , impurity , fermi gas , materials science , quantum oscillations , optics , quantum mechanics , laser

Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53Ga0.47As/In0.52Al0.48As quantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.

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