Open AccessElectron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
Author(s) -
Shang Li-Yan,
Lin Tie,
Weixing Zhou,
Huang Zhi-ming,
Donglin Li,
Gao Hong-Ling,
Lei Cui,
Yiping Zeng,
Guo Shao-Ling,
Chu Jun-Hao
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.2481
Subject(s) - scattering , quantum well , electron , shubnikov–de haas effect , condensed matter physics , physics , electron density , impurity , fermi gas , materials science , quantum oscillations , optics , quantum mechanics , laser
Magnetotransport properties of two-dimensional electron gas have been investigated for three In0.53Ga0.47As/In0.52Al0.48As quantum well samples having two occupied subbands with different well widths. When the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast Fourier transform of the first derivative of Shubnikov-de Haas oscillations. It is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.