Open AccessGeometrical optimization of AlGaN/GaN field-plate high electron mobility transistor
Author(s) -
Wei Wei,
Yue Hao,
Feng Qian,
Jincheng Zhang,
Jinfeng Zhang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.2456
Subject(s) - electric field , transistor , materials science , electron , electron mobility , insulator (electricity) , field (mathematics) , threshold voltage , induced high electron mobility transistor , field effect transistor , voltage , channel (broadcasting) , optoelectronics , computational physics , physics , computer science , telecommunications , mathematics , quantum mechanics , pure mathematics
Results of investigation on AlGaN/GaN field-plate high electron mobility transistor with different field-plate (FP) geometry are presented. The effect of the field-plate length LFP on the electric field distribution in the channel is thoroughly analyzed by establishing a simplified model. The simulation gives the following estimates: Both the FP length LFP and the thickness t of the insulator under the FP, can reshape the electric field distribution in the channel. If LFP is short, the breakdown voltage Vbr increases with LFP. When LFP increases to a certain extent, Vbr keeps invariable. After optimizing LFP in this paper, Vbr has been increased by 64%. Good agreement between experimental and simulation data is achieved.