Open AccessStudy on the mechanical properties of diamond like carbon films with Si doping
Author(s) -
Zhao Dong-cai,
Nanqi Ren,
Zhijun Ma,
Qiu Jia-Wen,
Xiao Geng-jie,
Wu Sheng-Hu
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1935
Subject(s) - materials science , thin film , graphite , doping , diamond , friction coefficient , carbon fibers , composite material , carbon film , diamond like carbon , analytical chemistry (journal) , nanotechnology , optoelectronics , composite number , chemistry , organic chemistry
A series of samples with different Si concentration were prepared by adjusting the numbers of Si-doped graphite targets and pure graphite targets. It was found that the stress in the thin films decreased from 4.5GPa to 3.1GPa when the Si concentration reached 6.7at.%but the hardness kept constant at about 3600Hvalmost the same as of un-doped thin filmsand the friction coefficient of thin films kept constant at about 0.15. As the Si concentration in the thin film kept on increasingthe concentration of C-Si bond will increaseleading to the decrease of hardness and stress and the increase of friction coefficient.