Open AccessOptical properties of InGaAs/GaAs quantum chains
Author(s) -
Baorui Wang,
Zheng Sun,
Zhijun Xu,
Bo Sun,
Jinming Yang,
Z. M. Wang,
Gregory J. Salamo
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1908
Subject(s) - photoluminescence , excitation , quantum dot , materials science , photon energy , transient (computer programming) , photon , polarization (electrochemistry) , quantum , physics , condensed matter physics , atomic physics , molecular physics , optoelectronics , optics , chemistry , quantum mechanics , computer science , operating system
We have investigated the steady-state and transient optical properties of InGaAs/GaAs quantum chains and found that the photoluminescence (PL) decay time exhibits a strong photon energy dependence. It increases with the decrease of the emission energy. It is also found that the PL decay time increases with the excitation power. When the excitation power is large enough the PL decay time tends to be saturated. All these experimental results show that there is a strong carrier coupling along the chain direction in the quantum dot chain structure. The polarization PL measurements further confirm the carrier transfer process along the chain direction.