Open AccessStudy of AlGaN/GaN MOSHEMT device with Al2O3 insulating film
Author(s) -
Feng Qian,
Yue Hao,
Yuanzheng Yue
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1886
Subject(s) - materials science , optoelectronics , high electron mobility transistor , schottky barrier , saturation current , schottky diode , breakdown voltage , atomic layer deposition , quantum tunnelling , x ray photoelectron spectroscopy , layer (electronics) , voltage , transistor , nanotechnology , electrical engineering , nuclear magnetic resonance , diode , physics , engineering
On the basis of AlGaN/GaN HEMTthe AlGaN/GaN MOSHEMT device was fabricated with Al2O3 insulating film for the first time, which was deposited by ALD.The X-ray photoelectron spectroscopy measurements showed successful deposition of Al2O3 layer on the AlGaN/GaN film. The results of Schottky capacitanceI-V characteristics and DC transfer characteristics measurement showed that the interface state density between the AlGaN film and the Al2O3 insulating film was fairly low and the MOSHEMT device showed successful gate control of drain current up to VGS=+3V and achieved drain saturation current of 800mA/mmwhich was much larger than that of the HEMT device. Furthermorethe gate leakage current of MOSHEMT is two orders lower in the reverse bias condition as compared with the Schottky gate structurewhich increased the device breakdown voltagewhile the leakage current was governed by the Fowler-Nordheim tunneling mechanism.