Open AccessStudy of conductive property for a N-VDMOS interface trap under X-ray radiation
Author(s) -
Sun Guang-Ai,
Hu Gangyi,
MoHua Yang,
Xu Shiliu,
Zhengfan Zhang,
Yukui Liu,
He Kaiquan,
Yi Zhong
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1872
Subject(s) - thermal conduction , radiation , trap (plumbing) , electrical conductor , interface (matter) , property (philosophy) , dissipation , materials science , annealing (glass) , x ray , optoelectronics , atomic physics , physics , optics , thermodynamics , composite material , philosophy , epistemology , capillary number , capillary action , meteorology
An N-channel VDMOS I-V curve is measured after X-ray radiation under condition of different power dissipation. It is found that the property of new interface traps induced by X-ray radiation of self-annealing VDMOS sample does not conform to existing theory reasonably well. Based on measured datawe advance the viewpoint that the interface trap has current conductive property besides being charged up, and the conduction is assumed to be the generation or recombination current caused by new interface traps, which can not be simply identified quantitatively from the I-V curve.