Open AccessThe effect of the inserted AlGaAs films on the behaviors of InAs quantum dot detector
Author(s) -
Chong Wang,
Zhaolin Liu,
Tianxin Li,
Pingping Chen,
Haoyang Cui,
Jun Xiao,
Shu Zhang,
Yiling Yu,
Wei Lu
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1155
Subject(s) - photocurrent , molecular beam epitaxy , materials science , photoelectric effect , quantum dot , optoelectronics , photoluminescence , detector , transmission electron microscopy , thin film , epitaxy , optics , nanotechnology , physics , layer (electronics)
Two InAs quantum dot samples have been grown by the solid source molecular beam epitaxy (MBE) and fabricated to detectors. AlGaAs thin films have been inserted into the source region for one of the two devices. The structural features of the two samples have been studied by using the transmission electron microscope (TEM). The photoelectric properties of them have been measured by the photoluminescence (PL) and photocurrent (PC) spectra. The experimental results indicated that the AlGaAs films have profound effects on the properties of the detector. According to the calculations based on effective mass approximation, the origins of the photocurrent peaks of the two devices have been identified.