Open AccessPreparation and characteristics of p-type ZnO by treated gaseous ammonia annealing
Author(s) -
Tang Lidan,
Yue Zhang
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1145
Subject(s) - annealing (glass) , materials science , hall effect , electrical resistivity and conductivity , sputter deposition , grain size , analytical chemistry (journal) , sputtering , ammonia , conduction band , thin film , composite material , nanotechnology , electron , chemistry , physics , engineering , organic chemistry , chromatography , quantum mechanics , electrical engineering
The p-type ZnOAl films deposited by RF/DC magnetron sputtering at room temperature were treated by gaseous ammonia annealing. The characteristics were examined by XRD, FESEM and Hall measurement. The results showed that the films crystallized in the wurzite phase with a preferential orientation along the c-axis and the surfaces are smooth and dense without visible pores and defects over the film, and the grain size was about 40—60nm at the annealing temperature of 700℃. The Hall measurement showed p-type conduction with the high carrier concentration of 8346×1018 cm-3 and low resistivity of 25014 Ω·cm when the annealing temperature was 700℃.