Open AccessProperties of p-type GaN etched by inductively coupled plasma and their improvement
Author(s) -
Lei Lu,
Xin Gong,
Yue Hao
Publication year - 2008
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.57.1128
Subject(s) - ohmic contact , x ray photoelectron spectroscopy , materials science , inductively coupled plasma , gallium nitride , plasma , analytical chemistry (journal) , atomic force microscopy , optoelectronics , nanotechnology , layer (electronics) , nuclear magnetic resonance , chemistry , physics , quantum mechanics , chromatography
Our preseut research was focused on the surface properies of the p-type gallium nitride (p-GaN) etched by inductively coupled plasma (ICP). Different methods were used to process the etched surface. The surface condition was investigated by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The current voltage measurement was used to show the I-V characteristics of Ni/Au contacts on the sample. The experimental result demonstrated that the NaOH treatment is effective in improving the material surface and the ohmic contact properties.