Open AccessModulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers
Author(s) -
Hongling Peng,
Han Qin,
Xiaohong Yang,
Zhichuan Niu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.863
Subject(s) - vertical cavity surface emitting laser , optoelectronics , materials science , quantum dot laser , modulation (music) , laser , quantum dot , quantum well , doping , optics , semiconductor laser theory , physics , semiconductor , acoustics
Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 μm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) are theoretically investigated. Some methods are developed to improve the VCSEL's modulation response. Significant improvement are prediced for p-type modulation doping. In connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed.