MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector | Zendy

Zili Xie | Zendy; Rong Zhang | Zendy; Xiu Xiang-Qian | Zendy; Ping Han | Zendy; Bin Liu | Zendy; Lin Chen | Zendy; Yu Huiqiang | Zendy; Jiang Ruo-Lian | Zendy; Yi Shi | Zendy; Zheng You-Dou | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector

Author(s) -

Zili Xie,

Rong Zhang,

Xiu Xiang-Qian,

Ping Han,

Bin Liu,

Lin Chen,

Yu Huiqiang,

Jiang Ruo-Lian,

Yi Shi,

Zheng You-Dou

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.6717

Subject(s) - ultraviolet , metalorganic vapour phase epitaxy , materials science , detector , optoelectronics , quality (philosophy) , optics , epitaxy , nanotechnology , physics , layer (electronics) , quantum mechanics

High quality AlGaN materials used in the DBR structure of ultraviolet detector are grown under different growth conditions. The structure, composition and photographic characteristics are determined by XRD, SEM and AFM. The influence of the growth conditions on the characteristics of the AlGaN materials are discussed.The good performance of the DBR structure of ultraviolet detector is obtained.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research