Open AccessMOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector
Author(s) -
Zili Xie,
Rong Zhang,
Xiangqian Xiu,
Han Ping,
Bin Liu,
Lin Chen,
Hao Yu,
Rui Jiang,
Shaohua Yi,
Youdou Zheng
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.6717
Subject(s) - ultraviolet , metalorganic vapour phase epitaxy , materials science , detector , optoelectronics , quality (philosophy) , optics , epitaxy , nanotechnology , physics , layer (electronics) , quantum mechanics
High quality AlGaN materials used in the DBR structure of ultraviolet detector are grown under different growth conditions. The structure, composition and photographic characteristics are determined by XRD, SEM and AFM. The influence of the growth conditions on the characteristics of the AlGaN materials are discussed.The good performance of the DBR structure of ultraviolet detector is obtained.